منابع مشابه
HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN 75 HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN
For the GaN material system, one reason for the breaking down of the efficiency is the socalled quantum confined Stark effect (QCSE). Since today’s LEDs are grown in the common [0001] (c-)direction, the internal polarization fields are perpendicular to the quantum wells. The cause of these internal fields are spontaneous and piezoelectric polarization. The reason for the latter is mechanical st...
متن کاملInfluence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explai...
متن کاملEnhancing GaN Self Separation in HVPE by Use of Molybdenum
We prepared 2”-GaN wafers as templates for a self separation process which is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates process starts with GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are getting masked with 200nm of SiN that is structured by means of optical litho...
متن کاملThermal Stability of MOCVD and HVPE GaN Layers
This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous species. Differences in crystal qual...
متن کاملDirect growth of freestanding GaN on C-face SiC by HVPE
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...
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ژورنال
عنوان ژورنال: SCIENTIA SINICA Technologica
سال: 2019
ISSN: 1674-7259
DOI: 10.1360/sst-2019-0008